Search results for "Quantum point contact"
showing 10 items of 14 documents
Reversed polarized emission in highly strained a-plane GaN/AlN multiple quantum wells
2010
The polarization of the emission from a set of highly strained $a$-plane GaN/AlN multiple quantum wells of varying well widths has been studied. A single photoluminescence peak is observed that shifts to higher energies as the quantum well thickness decreases due to quantum confinement. The emitted light is linearly polarized. For the thinnest samples the preferential polarization direction is perpendicular to the wurtzite $c$ axis with a degree of polarization that decreases with increasing well width. However, for the thickest well the preferred polarization direction is parallel to the $c$ axis. Raman scattering, x-ray diffraction, and transmission electron microscopy studies have been p…
Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates
2009
5 páginas, 5 figuras.
Silicon quantum point contact with aluminum gate
2000
Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and A…
Ballistic transport through quantum point contacts of multi-orbital oxides
2020
Linear and non-linear transport properties through an atomic-size point contact based on oxides two-dimensional electron gas is examined using the tight-binding method and the $\mathbf{k\cdot p}$ approach. The ballistic transport is analyzed in contacts realized at the (001) interface between band insulators $LaAlO_3$ and $SrTiO_3$ by using the Landauer-B\"uttiker method for many sub-bands derived from three Ti 3d orbitals ($d_{yz}$, $d_{zx}$ and $d_{xy}$) in the presence of an out-of-plane magnetic field. We focus especially on the role played by the atomic spin-orbit coupling and the inversion symmetry breaking term pointing out three transport regimes: the first, at low energies, involvi…
Charge control in laterally coupled double quantum dots
2011
4 figuras, 4 páginas.-- PACS number(s): 78.67.Hc, 73.21.La, 78.55.Cr
Pfaffian and fragmented states atν=52in quantum Hall droplets
2008
When a gas of electrons is confined to two dimensions, application of a strong magnetic field may lead to startling phenomena such as emergence of electron pairing. According to a theory this manifests itself as appearance of the fractional quantum Hall effect with a quantized conductivity at an unusual half-integer v=5/2 Landau level filling. Here we show that similar electron pairing may occur in quantum dots where the gas of electrons is trapped by external electric potentials into small quantum Hall droplets. However, we also find theoretical and experimental evidence that, depending on the shape of the external potential, the paired electron state can break down, which leads to a fragm…
Spin-density waves in superdeformed quantum dots
1998
Abstract Electronic shell structure and spin effects in deformed quantum dots are investigated using spin-density functional theory. We recently suggested (Koskinen et al., Phys. Rev. Lett. 79 (1997) 1389) that for circular dots, depending on the density of the two-dimensional electron gas and the electron number, a spin-density wave-like state can occur as a possible ground state. Here these studies are extended to deformed and superdeformed dots, which approach the limit of a finite quantum wire.
Tuning the exciton luminescence in an acoustically depleted two-dimensional electron gas
2007
Standing-wave piezoelectric fields can be used to vary spatially and temporally charge conditions in $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}$ quantum wells (QWs), offering a versatile tool to control the two-dimensional electron gas (2DEG) density in the well. A $\mathrm{Li}\mathrm{Nb}{\mathrm{O}}_{3}$ piezoelectric resonator imparts a MHz-frequency oscillating piezoelectric field with a controllable ratio of the in-plane and the vertical field components to a 2DEG placed in close proximity to the plate surface. This allows us to dynamically tune the charge state in the plane of the QW and to influence the photoluminescence spectra. It is found that spatially distributed r…
Differences between photoluminescence spectra of type-I and type-II quantum dots
2008
Semiconductor quantum dots which trap simultaneously electrons and holes are called quantum dots of type-I. Contrary to these structures, empty dots of type-II attract only one type of charged carriers and repel the other. Particularities of confining potential are unaccessible by any direct measurements, thus recognition of quantum dot type by indirect method is highly desired. Our proposal is to distinguish between the two types of quantum dots via a comparison of photoluminescence spectra of these structures, which differ in both cases qualitatively.
Detector's quantum backaction effects on a mesoscopic conductor and fluctuation-dissipation relation
2016
When measuring quantum mechanical properties of charge transport in mesoscopic conductors, backaction effects occur. We consider a measurement setup with an elementary quantum circuit, composed of an inductance and a capacitor, as detector of the current flowing in a nearby quantum point contact. A quantum Langevin equation for the detector variable including backaction effects is derived. Differences with the quantum Langevin equation obtained in linear response are pointed out. In this last case, a relation between fluctuations and dissipation is obtained, provided that an effective temperature of the quantum point contact is defined.